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Self-assembled InAs quantum dots on patterned GaAs(001) substrates: Formation and shape evolution

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3 Author(s)
Kiravittaya, S. ; Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany ; Rastelli, A. ; Schmidt, O.G.

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We report on the formation of ordered and size homogeneous InAs quantum dot (QD) arrays on patterned GaAs(001) substrates. A material depletion region is observed around the patterned area while a long-range homogeneous distribution of QDs is found inside the patterned area. A sample with less InAs deposition shows a gradient in the material distribution over the patterned area. Based on these observations we propose a simple model to describe the QD formation in the patterned area. The QD shape evolution is also investigated and discussed.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 24 )