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Current-voltage characteristics of p-InGaN/n-GaN vertical conducting diodes on n+-SiC substrates

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4 Author(s)
Nishikawa, Atsushi ; NTT Basic Research Laboratories, NTT Corporation 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan ; Kumakura, K. ; Akasaka, Tetsuya ; Makimoto, T.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2140483 

p-InGaN/n-GaN vertical conducting diodes have been grown on n+-SiC substrates by low-pressure metalorganic vapor phase epitaxy and their current-voltage characteristics have been investigated. The typical forward voltage drop was 3.8–4.0 V at a forward current density of 100 A/cm2 with an on-state resistance of ∼1.3 mΩ cm2. The ideality factor of the samples was ∼2, meaning that the tunneling current through defects is small enough in these devices. The breakdown voltage (VB) increased with increasing n-GaN layer thickness, while it increased with decreasing carrier concentration of the layer by substituting undoped GaN for n-GaN. When the undoped GaN layer thickness was increased to 1800 nm, the highest breakdown voltage of 305 V was obtained with a low on-state resistance (Ron) of 1.51 mΩ cm2, leading to the figure-of-merit, (VB)2/Ron, of 62 MW/cm2.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 23 )

Date of Publication:

Dec 2005

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