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Browse Journals & Magazines > Applied Physics Letters ...> Volume:87 Issue:23 Help

GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

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14 Author(s)
Niu, Z.C. ; State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China ; Zhang, S.Y. ; Ni, H.Q. ; Wu, D.H.
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Starting from the growth of high-quality 1.3 μm GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 μm by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 μm range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 μm lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm2 with as-cleaved facet mirrors.

Published in:
Applied Physics Letters  (Volume:87 ,  Issue: 23 )

Date of Publication: Dec 2005

Page(s):
231121 - 231121-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2140614
Date of Current Version :
18 June 2009
Issue Date :
Dec 2005

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