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Browse Journals & Magazines > Applied Physics Letters ...> Volume:87 Issue:22 Help

Low-threshold-current operation of 1540 nm GaInAsP/InP distributed-feedback lasers with multiple-quantum-wire active regions

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7 Author(s)
Yagi, Hideki ; Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan and CREST, Japan Science and Technology Agency, Kawaguchi Center Building, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan ; Miura, Koji ; Nishimoto, Y. ; Plumwongrot, D.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2138789 

1540 nm wavelength GaInAsP/InP distributed-feedback lasers consisting of multiple-quantum-wire active regions with the wire width of 24 nm were realized by electron-beam lithography, CH4/H2 reactive ion etching, and two-step organometallic vapor-phase-epitaxial growth processes. A threshold current as low as 2.7 mA (threshold current density=270 A/cm2), a differential quantum efficiency of 19%/facet and a submode suppression ratio of 51 dB at a bias current of twice the threshold were achieved for the stripe width of 3.0 μm and the cavity length of 330 μm under a room-temperature continuous-wave condition.

Published in:
Applied Physics Letters  (Volume:87 ,  Issue: 22 )

Date of Publication: Nov 2005

Page(s):
223120 - 223120-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2138789
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Nov 2005

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