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Fabrication and characterization of electrostatic Si/SiGe quantum dots with an integrated read-out channel

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4 Author(s)
Sakr, M.R. ; Department of Physics, University of California, Los Angeles, California 90024 ; Jiang, H.W. ; Yablonovitch, E. ; Croke, E.T.

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A nontraditional fabrication technique is used to produce quantum dots with read-out channels in silicon/silicon–germanium two-dimensional electron gases. The technique utilizes Schottky gates, placed on the sides of a shallow etched quantum dot, to control the electronic transport process. An adjacent quantum point contact gate is integrated to the side gates to define a read-out channel, and thus allow for noninvasive detection of the electronic occupation of the quantum dot. Reproducible and stable Coulomb oscillations and the corresponding jumps in the read-out channel resistance are observed at low temperatures. The fabricated dot combined with the read-out channel represents a step toward the spin-based quantum bit in Si/SiGe heterostructures.

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Applied Physics Letters  (Volume:87 ,  Issue: 22 )