By Topic

Fabrication and characterization of electrostatic Si/SiGe quantum dots with an integrated read-out channel

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Sakr, M.R. ; Department of Physics, University of California, Los Angeles, California 90024 ; Jiang, H.W. ; Yablonovitch, E. ; Croke, E.T.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2136436 

A nontraditional fabrication technique is used to produce quantum dots with read-out channels in silicon/silicon–germanium two-dimensional electron gases. The technique utilizes Schottky gates, placed on the sides of a shallow etched quantum dot, to control the electronic transport process. An adjacent quantum point contact gate is integrated to the side gates to define a read-out channel, and thus allow for noninvasive detection of the electronic occupation of the quantum dot. Reproducible and stable Coulomb oscillations and the corresponding jumps in the read-out channel resistance are observed at low temperatures. The fabricated dot combined with the read-out channel represents a step toward the spin-based quantum bit in Si/SiGe heterostructures.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 22 )