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Current-controlled resistance modulation in ferroelectric Cd1-xZnxS thin films for nonvolatile memory applications

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3 Author(s)
Subramaniam, N.G. ; Quantum Functional Semiconductor Research Center (QSRC), Dongguk University, 26, 3 ga, Phil-dong, Chung-gu, Seoul 100-715, Korea ; Lee, J.C. ; Kang, T.W.

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Ternary II-VI semiconducting Cd1-xZnxS thin films with top metal and bottom semiconductor contacts were investigated for their ferroelectric and switching properties. Bistable switching of about four orders of magnitude between low and high resistance states was observed in current-voltage measurements. Current pulse-driven reproducible resistance modulation with resistance changes up to two orders of magnitude was observed without the contribution of carrier injection. Read-write measurements with application of short pulse widths were performed that displayed an appreciable current difference between the read levels. Polarization-induced switching was addressed through the ferroelectric semiconductor/semiconductor junction.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 21 )

Date of Publication:

Nov 2005

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