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Near-infrared electroluminescent devices using single-wall carbon nanotubes thin flms

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6 Author(s)
Kazaoui, S. ; Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan ; Minami, N. ; Nalini, B. ; Kim, Y.
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We have fabricated near-infrared electroluminescent (EL) devices utilizing single-wall carbon nanotubes (SWNTs) finely dispersed in a polymer, such as poly[2-methoxy-5-(2-ethylhexyloxy]-1,4-phenylenevinylene (MEHPPV). Al/SWNT-MEHPPV/indium tin oxide thin-film devices exhibit a very promising EL response over a broad spectrum, including the range of 900–1600 nm. From the analysis of the optical absorption, photoluminescence and EL spectra, as well as the current-voltage characteristics, we demonstrate that those devices exploit the intrinsic near-infrared light-emitting properties of semiconducting SWNTs and the electronic transport properties of SWNT-doped MEHPPV. Those achievements are essential for the future development of thin-film SWNT optoelectronic devices.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 21 )

Date of Publication:

Nov 2005

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