By Topic

Formation and evolution of epitaxial Co5Ge7 film on Ge (001) surface by solid-state reaction in an in situ ultrahigh-vacuum transmission electron microscope

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Sun, H.P. ; Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 ; Chen, Y.B. ; Pan, X.Q. ; Chi, D.Z.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A thin metallic cobalt (Co) layer was deposited on a single-crystal Ge (001) surface at room temperature by the electron-beam evaporation of a pure Co metal source in an ultrahigh-vacuum transmission electron microscope. The formation and epitaxial growth of a cobalt germanide Co5Ge7 phase on the Ge (001) surface was studied in situ by gradually heating the sample from room temperature to ∼350 °C. The occurrence of an epitaxial hexagonal-close-packed Co and the reaction between Co and Ge were observed at ∼225 °C. After annealing at ∼300 °C for 26.5 h, a continuous epitaxial Co5Ge7 film formed on the Ge (001) substrate. With further annealing at a higher temperature, the continuous Co5Ge7 layer broke up and formed three-dimensional islands in order to relieve the strain energy in the epitaxial Co5Ge7 layer. Two epitaxial relationships between Co5Ge7 and Ge, i.e., Co5Ge7<110>(001)//Ge<100>(001) and Co5Ge7<001>(110)//Ge<100>(001) were found by electron diffraction.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 21 )