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Nonlinear all-optical GaN/AlGaN multi-quantum-well devices for 100 Gb/s applications at λ=1.55 μm

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3 Author(s)
Sun, Greg ; Department of Physics, University of Massachusetts, Boston, Massachusetts 02125 ; Khurgin, J.B. ; Soref, Richard A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2132084 

Using quantum-mechanical analysis, a strain-balanced stack of coupled GaN/AlGaN quantum wells has been engineered for bandwidth-optimized all-optical switching at low switching powers. Intersubband transitions between three conduction subbands provide the basis for the large, fast, nonlinear optical response. Optimized performance for a given symbol rate is obtained by engineering the response time and nonlinear phase shift.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 20 )

Date of Publication:

Nov 2005

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