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Reverse biased safe operating area of emitter switched thyristors

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2 Author(s)
N. Iwamuro ; Adv. Device Tech. Lab., Fuji Electr. Co. Ltd., Nagano, Japan ; B. J. Baliga

The reverse biased safe operating area (RBSOA) of 600 V and 2500 V EST devices has been analyzed by numerical simulation for the first time and compared with those for the IGBT and MCT. The dependence of the RBSOA upon the P-base resistance in the main thyristor structure of the EST has also been investigated. Two types of destructive failure mechanisms have been identified: one due to the voltage-induced avalanche multiplication, and the other associated with current-induced latch-up of the parasitic thyristor. It is demonstrated that, although the voltage-induced limit is identical for all three devices, the current induced RBSOA for the EST can be improved over the IGBT and MCT with little sacrifice of the on-state characteristics. In addition, a comparison of the RBSOA with the forward biased safe operating area (FBSOA) has been performed

Published in:

IEEE Transactions on Electron Devices  (Volume:43 ,  Issue: 2 )