Large area MOS-gated power devices using fusible link technology

A new approach for improving the yield of large area MOS-gated power devices is described based upon wafer repair using fusible links of aluminum or polysilicon to isolate defective segments from the rest of the device. Unlike previously reported wafer repair techniques, the proposed approach does not require any knowledge of the location of the fault (gate-to-source short) within the device. Work done on the development of power-MOS process compatible fusible links is described in this paper. Power MOSFET's and IGBT's have been successfully fabricated using these fusible links to perform wafer repair.