Cart (Loading....) | Create Account
Close category search window

Electron spin resonance investigation of oxygen-vacancy-related defects in BaTiO3 thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Laguta, V.V. ; Institute for Problems of Material Science, NASc of Ukraine, 3 Krjijanovskogo Strasse, 03680 Kiev, Ukraine ; Slipenyuk, A.M. ; Bykov, I.P. ; Glinchuk, M.D.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The Ti3+ center, based on a regular Ti site perturbed by an oxygen vacancy (VO), is identified by electron spin resonance (ESR) in textured BaTiO3 films. The center shows tetragonal symmetry along cubic <100> axes with g-factors: g||=1.997, g=1.904. The spectrum of this defect disappeared after the film annealing at 700 °C in an O2 atmosphere. We describe the observed spectrum as Ti3+VO couple defects or F+ center, which have never been observed in bulk BaTiO3. ESR is thus a unique tool to identify oxygen-vacancy-related defects, which have a large effect on the performance of ferroelectric films.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 2 )

Date of Publication:

Jul 2005

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.