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Effect of Y doping and composition-dependent elastic strain on the electrical properties of (Ba,Sr)TiO3 thin films deposited at 520 °C

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7 Author(s)
Wang, Ruey-Ven ; Department of Materials Science and Engineering, Stanford University, California ; McIntyre, Paul C. ; Baniecki, John D. ; Nomura, Kenji
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2125113 

We demonstrate that large and simultaneous improvements in permittivity, tunability, and leakage current density of (Ba,Sr)TiO3 (BST)-based thin-film capacitors can be achieved by yttrium doping. We have found that, for a low deposition temperature (520 °C) sputtering process, Y-doped BST capacitors exhibit tenfold lower leakage current density (≪10-9 A/cm2 at 100 KV/cm) and 70% higher permittivity than nominally undoped BST-based capacitors. Furthermore, this work suggests an intriguing correlation between dopant concentration-dependent elastic strain in the films and their enhanced dielectric properties.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 19 )

Date of Publication:

Nov 2005

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