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Local-strain effects in Si/SiGe/Si islands on oxide

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3 Author(s)
Chiang, K.N. ; Advanced Microsystem Packaging and Nano-Mechanics Research Labortary, Department of Power Mechanical Engineering, National Tsing Hua University, HsinChu, Taiwan, Republic of China ; Chang, C.H. ; Peng, C.T.

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The tensile-strained Si, based on the misfit between Si and SiGe gives high speed and high drive current to the metal-oxide-silicon field effect transistors. In order to achieve the total system minimum energy, the island edge, within some characteristic length, bends upwards giving rise to a distorted lattice, as simulated by the finite element method. The finding indicates that the conventional strain partition rule of Si/SiGe/Si layers used for a large island size (≫10 μm) is not adequate for a small island size (≪200 nm) due to the significant local-strain effect of the edge lattice distortion. For a small island size, the bending from the edge can significantly affect the strain on the surface of the top Si layer, and a compressive strain or reduced tensile strain occurs at the center of the top Si layer, while the conventional strain partition rule predicts a uniform tensile strain on the top Si layer for any size of Si/SiGe/Si islands.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 19 )