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0.15 μm T-shaped gate fabrication for GaAs MODFET using phase shift lithography

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2 Author(s)
Takenaka, H. ; Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan ; Ueda, D.

A new fabrication process of GaAs MODFETs with 0.15 micron T-shaped gate has been developed by using phase shift lithography. Sub-quarter micron footprints of T-shaped gates are defined as line patterns by PEL (pattern-edge line) method using chemically stable positive photoresist. Parasitic capacitances such as Cgs and Cgd are also reduced by the air-gap incorporated in the present process. An implemented GaAs MODFET exhibited the NF of 0.36 dB and the gain of 11.5 dB at the frequency of 12 GHz

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Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 2 )