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High-performance GaN-based light-emitting diode using high-transparency Ni/Au/Al-doped ZnO composite contacts

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9 Author(s)
Jung, Sung-Pyo ; Department of Electrical Engineering and Computer Science, Henry Samueli School of Engineering, University of California, Irvine, California 92697 ; Ullery, Denise ; Lin, Chien-hung ; Lee, Henry P.
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We report on a high-transparency low-resistance composite contact structure on p-GaN for light-emitting diode applications. The structure consists of a thin Ni (5 nm)/Au (5 nm) layer overcoated with a sputtered Al-doped ZnO (170 nm) layer. Enhancement in light emission intensity as high as 74% at 40 mA and forward operating voltages in the range of 3.36–3.48 V at 20 mA are obtained for these devices using a two-step thermal annealing process.

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Applied Physics Letters  (Volume:87 ,  Issue: 18 )