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Field-effect transistors with carbon nanotubes (CNTs) suspended across etched slits and fabricated by chemical vapor deposition have been characterized by electrical measurements and transmission electron microscopy. Two devices are examined here: One is semiconducting from two single-wall CNTs, and the other is semiconducting and metallic, with a large off current, that comes from multiple nanotubes. The study highlights the importance of structural characterization in understanding the performance of CNT devices.