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Electron-phonon scattering and ballistic behavior in semiconducting carbon nanotubes

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4 Author(s)
dHonincthun, H.Cazin ; Institut d’Electronique Fondamentale, UMR8622 CNRS/UPS, University of Paris 11, Bât. 220, 91405 Orsay, France ; Galdin-Retailleau, S. ; See, J. ; Dollfus, P.

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We study the steady-state and ballistic transport properties of semiconducting zig-zag carbon nanotubes (CNTs) using semiclassical Monte Carlo simulation. Electron-phonon scattering is the only type of interaction included in the model. The band structure and phonon dispersion are derived from that of graphene by the zone folding method. Steady-state drift velocity and low-field mobility are calculated for CNTs with wrapping index ranging from n=10 to n=59, i.e., for a diameter range of 0.78-4.62 nm. Principally, a transient analysis of transport under uniform driving field is realized and gives the fraction of ballistic electrons as a function of CNT length and the mean free path (MFP) for acoustic and optical phonons scattering. The probability to have ballistic electrons on a given distance appears to be higher for nanotubes of large diameter and depends on the field applied.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 17 )