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Lateral electron transport in Cu(In,Ga)Se2 investigated by electro-assisted scanning tunneling microscopy

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4 Author(s)
Romero, M.J. ; National Renewable Energy Laboratory (NREL), 1617 Cole Boulevard, Golden, Colorado 80401-3393 ; Chun-Sheng Jiang ; Noufi, R. ; Al-Jassim, M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2119422 

We investigate the lateral electron transport across grain boundaries in Cu(In,Ga)Se2 (CIGS) by a combination of scanning tunneling microscopy (STM) with the excitation provided by the electron beam in electron microscopy—or electro-assisted STM. Using this method, we report evidence for a significant barrier for electron diffusion across grain boundaries in CuGaSe2 (CGS), which is not present in CuInSe2 (CIS). Finally, we discuss the effects of gallium addition.

Published in:
Applied Physics Letters  (Volume:87 ,  Issue: 17 )

Date of Publication: Oct 2005

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