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In situ hole doping of wide-gap semiconductors by dual-target simultaneous laser ablation: GaN and SiC epitaxial films

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4 Author(s)
Muto, Hachizo ; Materials Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology (AIST) Chubu, 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya, 463-8560 Japan ; Asano, Takashi ; Wang, Rong-Ping ; Kusumori, Takeshi

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Apparatus for dual-target simultaneous laser ablation deposition and in situ doping techniques have been developed to achieve p-type doping during epitaxial growth of wide-band-gap semiconductors. The apparatus has two target holders with a target-rotation mechanism and a rotation-axis adjusting mechanism to obtain homogeneously doped films. Mg-doped GaN films have been fabricated on 6H–SiC(0001) and Si(111) substrates in NH3 ambient by simultaneous ablation of GaN and Mg-metal targets using two lasers. Junctions of the films with n-type substrates show a diode curve characteristic of p-n junctions, but not for junction with p-Si, indicating hole doping without further procedures. In situ p-type doping to SiC was also achieved by using SiC and Al4C3 targets.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 16 )