In situ hole doping of wide-gap semiconductors by dual-target simultaneous laser ablation: GaN and SiC epitaxial films

Apparatus for dual-target simultaneous laser ablation deposition and in situ doping techniques have been developed to achieve p-type doping during epitaxial growth of wide-band-gap semiconductors. The apparatus has two target holders with a target-rotation mechanism and a rotation-axis adjusting mechanism to obtain homogeneously doped films. Mg-doped GaN films have been fabricated on 6H–SiC(0001) and Si(111) substrates in NH₃ ambient by simultaneous ablation of GaN and Mg-metal targets using two lasers. Junctions of the films with n-type substrates show a diode curve characteristic of p-n junctions, but not for junction with p-Si, indicating hole doping without further procedures. In situ p-type doping to SiC was also achieved by using SiC and Al₄C₃ targets.