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Evolution of basal plane dislocations during 4H-silicon carbide homoepitaxy

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2 Author(s)
Zhang, Z. ; Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208 ; Sudarshan, T.S.

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A method based on the combination of molten KOH etching and reactive ion etching was developed to track dislocations from 4H-silicon carbide homoepilayer to the substrate. The conversion of basal plane dislocations (BPDs) to threading edge dislocations (TEDs) was found to occur at the epilayer/substrate interface. The BPDs with dislocation lines parallel (or approximately parallel) to the off-cut direction may propagate as BPDs into the epilayer, while those with dislocation lines forming large angles (≫10°) with the off-cut direction will get converted to TEDs. A model is proposed to explain the observations.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 16 )