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Browse Journals & Magazines > Applied Physics Letters ...> Volume:87 Issue:16 Help

High structural and optical quality 1.3 μm GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy

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8 Author(s)
Zhang, Shiyong ; State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences (CAS), Beijing 100083, China ; Niu, Zhichuan ; Ni, Haiqiao ; Wu, Donghai
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High structural and optical quality 1.3 μm GaInNAs/GaAs quantum well (QW) samples with higher (42.5%) indium content were successfully grown by molecular-beam epitaxy. The cross-sectional transmission electron microscopy measurements reveal that there are no structural defects in such high indium content QWs. The room-temperature photoluminescence peak intensity of the GaIn0.425NAs/GaAs (6 nm/20 nm) 3QW is higher than, and the full width at half maximum is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality caused by strain compensation effect of introducing N to the high indium content InGaAs epilayer.

Published in:
Applied Physics Letters  (Volume:87 ,  Issue: 16 )

Date of Publication: Oct 2005

Page(s):
161911 - 161911-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2108117
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Oct 2005

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