Referenced Items are not available for this document.
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2043236
A writing scheme is presented for Savtchenko-type magnetic random access memory (MRAM) cells, which allows for ultrafast direct writing with high stability against half select switching, using two orthogonally oriented unipolar magnetic field pulses with time delay, which allows for backswitching by reversing the temporal sequence of the two pulses. The numerical simulations are based on the Stoner–Wohlfarth model and a Runge Kutta integration of the Landau–Lifshitz and Gilbert equation.
Published in:
Applied Physics Letters
(Volume:87
,
Issue:
14
)
Date of Publication: Oct 2005
- Page(s):
- 142503 - 142503-3
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.2043236
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Oct 2005
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
