By Topic

Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Lai, K. ; Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 ; Ye, P.D. ; Pan, W. ; Tsui, D.C.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2076439 

Metal-oxide-semiconductor field-effect-transistors using atomic-layer-deposited (ALD) Al2O3 as the gate dielectric are fabricated on the Si/Si1-xGex heterostructures. The low-temperature carrier density of a two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.5×1011 to 4.5×1011 cm-2, virtually without any gate leakage current. Magnetotransport data show the homogeneous depletion of 2DES under gate biases. The characteristic of vertical modulation using ALD dielectric is shown to be better than that using Schottky barrier or the SiO2 dielectric formed by plasma-enhanced chemical-vapor-deposition.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 14 )