By Topic

Design and simulation of InGaAs/AlAsSb quantum-cascade lasers for short wavelength emission

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Evans, C.A. ; School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom ; Jovanovic, V.D. ; Indjin, D. ; Ikonic, Z.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The design and simulation of an In0.53Ga0.47As/Al0.56As0.44Sb quantum-cascade laser emitting in the near infrared is presented. Designed using a self-consistent rate equation solver coupled with an energy balance rate equation, the proposed laser has a calculated population inversion of ∼20% at 77 K and sufficient gain to achieve room-temperature laser emission at λ∼2.8 μm. Threshold currents in the range 4–8 kA/cm2 are estimated as the temperature increases from 77 K to 300 K. The output characteristics of the proposed laser are compared to an existing λ∼3.1 μm In0.53Ga0.47As/Al0.56As0.44Sb quantum-cascade structure presented in the literature.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 14 )