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Browse Journals & Magazines > Applied Physics Letters ...> Volume:87 Issue:13 Help

Observation of the quantum-confinement effect in individual Ge nanocrystals on oxidized Si substrates using scanning tunneling spectroscopy

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4 Author(s)
Nakamura, Yoshiaki ; Quantum-Phase Electronics Center, Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and CREST, Japan Science and Technology Agency, Japan ; Watanabe, K. ; Fukuzawa, Yo ; Ichikawa, Masakazu

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2067711 

Scanning tunneling spectroscopic studies revealed the quantum-confinement effects in Ge nanocrystals formed with ultrahigh density (≫1012 cm-2) by Ge deposition on ultrathin Si oxide films. With decreasing crystal size, the conduction band maximum upshifted and the valence band minimum downshifted. The energy shift in both cases was about 0.7 eV with the size change from 7 to 2 nm. This shows that the energy band gaps of Ge nanocrystals increased to ∼1.4 eV with decreasing size. This size dependence can be explained by the quantum-confinement effect in Ge nanocrystals.

Published in:
Applied Physics Letters  (Volume:87 ,  Issue: 13 )

Date of Publication: Sep 2005

Page(s):
133119 - 133119-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2067711
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Sep 2005

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