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Interface structure and phase of epitaxial SrTiO3 (110) thin films grown directly on silicon

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4 Author(s)
Hao, J.H. ; Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong ; Gao, J. ; Wang, Z. ; Yu, D.P.

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The interface structure and phase between SrTiO3 (110) on Si (100) have been investigated using high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The SrTiO3/Si interface was found to be epitaxially crystallized without any amorphous oxide layer. The formation of Sr silicate at the interface was suggested by considering the fact of the core-level spectra of the Si 2p, O 1s, and Sr 3d. Our results suggest that the presence of a coincident site lattice at the interface between Si and a Sr silicate and/or SrTiO3 may help to stabilize SrTiO3 in the epitaxial orientation reported in the work.

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Applied Physics Letters  (Volume:87 ,  Issue: 13 )