By Topic

Interface structure and phase of epitaxial SrTiO3 (110) thin films grown directly on silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Hao, J.H. ; Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong ; Gao, J. ; Wang, Z. ; Yu, D.P.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The interface structure and phase between SrTiO3 (110) on Si (100) have been investigated using high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The SrTiO3/Si interface was found to be epitaxially crystallized without any amorphous oxide layer. The formation of Sr silicate at the interface was suggested by considering the fact of the core-level spectra of the Si 2p, O 1s, and Sr 3d. Our results suggest that the presence of a coincident site lattice at the interface between Si and a Sr silicate and/or SrTiO3 may help to stabilize SrTiO3 in the epitaxial orientation reported in the work.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 13 )