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Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition

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3 Author(s)
Oh, Min-Suk ; Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea ; Kim, Sang-Ho ; Seong, Tae-Yeon

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We report on the growth of nominally undoped p-type ZnO films on Si(111) substrates by pulsed-laser deposition. Hall effect measurements show that the undoped ZnO films change from n-type to p-type material when the oxygen pressure changes from 6×10-5 to 3×10-4 Torr during growth. Ti/Au contacts produce ohmic behavior to n-type ZnO (∼1017 cm-3), but leaky Schottky behavior to p-type ZnO (∼1018 cm-3). Electrical and photoluminescence results indicate that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.

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Applied Physics Letters  (Volume:87 ,  Issue: 12 )