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Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge

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7 Author(s)
Spiga, S. ; Laboratorio Nazionale MDM-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (MI), Italy ; Wiemer, C. ; Tallarida, G. ; Scarel, G.
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We report on the growth by atomic layer deposition of HfO2 films on HF-last treated Ge(001) substrates using HfCl4 as a Hf source and either O3 or H2O as oxygen sources. The choice of the oxygen precursor strongly influences the structural, chemical, and electrical properties of the HfO2 films: Those grown using H2O exhibit local epitaxial growth, a large amount of contaminants such as chlorine and carbon, and a large frequency dispersion of the capacitance-voltage (C–V) characteristics. Films grown using O3 are good insulators and exhibit well-shaped C–V curves with a minimum frequency dispersion of the accumulation capacitance. Moreover, they are smoother, less crystallized, and with a lower contaminant content than those grown using H2O. However, the use of O3 leads to the formation of a 2 nm thick layer, possibly GeOx, at the HfO2/Ge interface.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 11 )

Date of Publication:

Sep 2005

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