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High electron mobility W-doped In2O3 thin films by pulsed laser deposition

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5 Author(s)
Newhouse, P.F. ; Department of Chemistry, Oregon State University, Corvallis, Oregon 97331-4003 ; Park, C.-H. ; Keszler, D.A. ; Tate, J.
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High electron mobility thin films of In2-xWxO3+y(0≤x≤0.075) were prepared on amorphous SiO2 and single-crystal yttria-stablized zirconia (001) substrates by pulsed laser deposition. Mobilities ranged between 66 and 112 cm2/Vs depending on the substrate type and deposition conditions, and the highest mobility was observed at a W-dopant concentration of x∼0.03. A small band gap shift was detected from films with increasing electron carrier density; the electron effective mass calculated from Burstein-Moss theory was 0.3me. In2-xWxO3+y films have high visible transmittance of ∼80%.

Published in:

Applied Physics Letters  (Volume:87 ,  Issue: 11 )

Date of Publication:

Sep 2005

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