By Topic

Extinction Ratio Improvement Due to a Bogatov-Like Effect in Ultralong Semiconductor Optical Amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Patrick Runge ; Fachgebiet Hochfrequenztech., Tech. Univ. Berlin, Berlin ; Robert Elschner ; Christian-Alexander Bunge ; Klaus Petermann

Theoretical results on the extinction ratio (ER) improvement in ultralong semiconductor optical amplifiers (UL-SOAs) are presented indicating a Bogatov-like effect in the saturated section. Starting from general nonlinear gain equations, an analytic description of the Bogatov-like effect is derived in terms of gain coefficients. These equations are used to explain the results of fully numerical simulations. The data signal's ER improves because of a two-step process. First, the data signal cross-gain modulates the additionally injected CW signal. Second, due to this inverse modulation, the data signal's states are differently amplified via the Bogatov-like effect. Since the ER improvement is caused by the fast intraband effects, this simple scheme has the potential for high-speed regeneration.

Published in:

IEEE Journal of Quantum Electronics  (Volume:45 ,  Issue: 6 )