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A monolithic DC temperature compensation bias scheme for multistage HEMT integrated circuits

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5 Author(s)
Kobayashi, K.W. ; Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA ; Jones, W.L. ; MacGowan, K. ; Kono, R.
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This work benchmarks the first demonstration of a multistage monolithic HEMT IC design which incorporates a DC temperature compensated current-mirror bias scheme. This is believed to be the first demonstrated monolithic HEMT bias scheme of its kind. The active bias approach has been applied to a 2-18 GHz five-section low noise HEMT distributed amplifier which achieves a nominal gain of 12.5 dB and a noise figure <2.5 dB across a 2-18 GHz band, The regulated current-mirror scheme achieves better than 0.2% current regulation over a 0-125°C temperature range, The RF gain response was also measured over the same temperature range and showed less than 0.75 dB gain degradation. This results in a -0.006 dB/°C temperature coefficient which is strictly due to HEMT device Gm variation with temperature. The regulated current-mirror circuit can be employed as a stand-alone Vgs-voltage reference circuit which fan be monolithically applied to the gate bias terminal of existing HEMT ICs for providing temperature compensated performance, This monolithic bias approach provides a practical solution to DC bias regulation and temperature compensation for HEMT MMICs which can improve the performance, reliability, and cost of integrated microwave assemblies (IMAs) used in space-flight military applications

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:44 ,  Issue: 2 )