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Silicon Waveguide Sidewall Smoothing by KrF Excimer Laser Reformation

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3 Author(s)
Shih-Che Hung ; Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei ; Liang, Eih-Zhe ; Ching-Fuh Lin

A novel laser-reformation technique is presented for sidewall smoothing of silicon waveguides. A KrF excimer laser is used to melt and reform the sidewalls to reduce the surface roughness. Atomic-force-microscopy measurement shows that the root-mean-square (rms) roughness is reduced from 14 to 0.24 nm. The calculated scattering loss is reduced to 0.033 dB/cm. The waveguide profile after laser illumination at an incident angle of 75deg transforms to a shape of arch. The crystal quality of laser-illuminated silicon wafer characterized by microwave reflection photoconductance-decay carrier lifetimes shows 94% less damage than the furnace-treated wafer.

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Lightwave Technology, Journal of  (Volume:27 ,  Issue: 7 )