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Zinc Tin Oxide Thin-Film-Transistor Enhancement/Depletion Inverter

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3 Author(s)
Heineck, D.P. ; Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR ; McFarlane, B.R. ; Wager, John F.

A fabrication process to create a zinc tin oxide (ZTO) thin-film-transistor (TFT) enhancement/depletion inverter using 15-mum channel lengths is developed. Both enhancement- and depletion-mode staggered bottom-gate ZTO TFTs are simultaneously fabricated on a single substrate using a single sputter target and postdeposition anneal step. At a rail voltage of 10 V, this inverter has a gain of 10.6 V/V.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 5 )

Date of Publication:

May 2009

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