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Charge transport properties and memory effects in organic thin-film transistors using polymeric dielectrics

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7 Author(s)
Chou-Yu Yang ; Inst. of Electro-Opt. Sci. & Eng., Nat. Cheng Kung Univ., Tainan ; Li-Ren Chang ; Yu-Shen Mai ; Hsin-Yuan Wang
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In this paper, a high performance tiny grain polycrystalline pentacene OTFT were produced by introducing a polymethylmethacrylate (PMMA) insulator as a gate dielectric modification layer. A typical bottom gate configuration with a silver top contact OTFT to study the electrical characteristics, charge transport properties, and the hysteresis or memory effects in the current-voltage characteristics is used. For comparison, the pentacene OTFTs using silicon dioxide (SiO2) as gate dielectrics, including three kinds of SiO2 (denoted as SiOl, SiO2, and SiO3) is also fabricated .

Published in:

Electrets, 2008. ISE-13. 13th International Symposium on

Date of Conference:

15-17 Sept. 2008