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This paper examines channel backscattering characteristics for nanoscale strained and unstrained p-channel MOSFETs (PMOSFETs) using the experimentally extracted backscattering coefficients by our modified self-consistent temperature-dependent extraction method. Through comparing the gate voltage and temperature dependence, we demonstrate that channel backscattering can be reduced by the uniaxial strain for PFETs. Besides, we show that the strain-reduced conductivity effective mass may raise the thermal velocity, mean-free path, and effective mobility. Contrary to previous studies, our results indicate that the ballistic efficiency can be enhanced for compressive-strained PFETs. In addition, the backscattering effect on the electrostatic potential is discussed.