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Integrating circuits into organic light emitting diode displays requires fabrication of polycrystalline silicon (poly-Si) based thin-film transistors (TFTs) on glass substrates. A novel ITO/AlNdN/Al contact process has been developed for the pixel step. In metallisation, ITO/Al interconnection is metallurgically undesirable. An AlNdN layer is selected for a pixel material and ITO/AlNdN/Al structure is applied to the pixel line. Reported is the feasibility for the multilevel ITO/AlNdN/Al contact, which can make the poly-Si TFTs competitive in the market.
Date of Publication: April 9 2009