Referenced Items are not available for this document.
Integrating circuits into organic light emitting diode displays requires fabrication of polycrystalline silicon (poly-Si) based thin-film transistors (TFTs) on glass substrates. A novel ITO/AlNdN/Al contact process has been developed for the pixel step. In metallisation, ITO/Al interconnection is metallurgically undesirable. An AlNdN layer is selected for a pixel material and ITO/AlNdN/Al structure is applied to the pixel line. Reported is the feasibility for the multilevel ITO/AlNdN/Al contact, which can make the poly-Si TFTs competitive in the market.
Published in:
Electronics Letters
(Volume:45
,
Issue:
8
)
Date of Publication: April 9 2009
- Page(s):
- 421 - 423
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 10612838
- Digital Object Identifier :
- 10.1049/el.2009.0037
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 17 April 2009
- Issue Date :
- April 9 2009
- Sponsored by :
- Institution of Engineering and Technology
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