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Solution-Processed Bootstrapped Organic Inverters Based on P3HT With a High- k Gate Dielectric Material

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5 Author(s)
Raval, H.N. ; Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India ; Tiwari, S.P. ; Navan, R.R. ; Mhaisalkar, S.G.
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In this letter, the integration of a high-k gate dielectric has been demonstrated for achieving low-operating-voltage organic field-effect transistors (OFETs) and circuits based on solution-processed poly(3-hexylthiophene) (P3HT). We have successfully demonstrated all-p-type organic circuits based on P3HT operating at below 4 V supply voltage. The switching behavior is improved by using the bootstrapping technique, with the bootstrapped inverter showing good results with a dc gain (A v) of - 1.7 and V OH and V OL values of 3.3 and 0.35 V, respectively. The output swing of the bootstrapped inverter is improved by about 40% when compared to that of simple all-p-type inverters, as demonstrated by using experimental characterizations.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 5 )