Skip to Main Content
We have investigated the low-frequency noise (LFN) properties of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) as a function of frequency, bias, and channel length of devices. The measured noise power spectral density of drain current (S iD) shows that the low-frequency noise in a-IGZO TFTs obeys the classical 1/f noise theory, i.e., it fits well to a 1/f gamma power law with gamma ~ 1 in the frequency range of 10 Hz to 1 kHz. From the dependence of normalized noise power spectral density (S iD/ID 2) on the gate voltage, mobility fluctuation is considered as a dominant LFN mechanism in a-IGZO TFTs. The magnitude of S iD/ID 2 is inversely proportional to the channel length of devices, which indicates that contact noise is insignificant in a-IGZO TFTs.