Referenced Items are not available for this document.
A radio-frequency equivalent circuit model for the symmetric vertical natural capacitor (VNCAP) in a 45 nm low-standby-power CMOS process is presented. The average effective capacitance density of 2.24 fF/ mum2 is obtained from VNCAPs of 1 times (M1 - M5) + 2 times (M6 - M7) metal-layer configuration after the open-short de-embedding procedure. The proposed model consists of main series capacitance network and lossy substrate network. The accuracy of the VNCAP model is verified S-parameters, effective capacitance Ceff, and quality factor (Q) up to 15 GHz. The proposed model can accurately describe the frequency characteristics of S-parameters, Ceff, and Q-factor up to 15 GHz for VNCAPs with different widths and lengths.
Published in:
Electron Device Letters, IEEE
(Volume:30
,
Issue:
5
)
Date of Publication: May 2009
- Page(s):
- 538 - 540
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10624926
- Digital Object Identifier :
- 10.1109/LED.2009.2015781
- Product Type:
- Journals & Magazines
- Date of Publication :
- 07 April 2009
- Date of Current Version :
- 24 April 2009
- Issue Date :
- May 2009
- Sponsored by :
- IEEE Electron Devices Society
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