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Helical Wiring Type Stress Relaxation Structures for LSI Packages

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5 Author(s)
Murai, H. ; Device Platforms Res. Labs., NEC Corp., Sagamihara, Japan ; Honda, H. ; Kikuchi, K. ; Yamamichi, S.
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Thermal stress, which is caused by the difference in thermal expansion coefficients of different materials, is a serious problem for large scale integrated (LSI) circuit packaging. The stress causes damage to LSI devices, especially those that have low-k materials in their LSI layer, and packaging substrates. We have developed a helical-micro-spring (HMS) to reduce damage due to thermal stress. The spring has a helical wiring structure that relieves any thermal stress. We have fabricated the HMS using a negative-type photopolymers or a positive-type photopolymer as dielectric layers. We have also simulated the spring's mechanical and electrical properties and compared the properties with other stress relaxation structure.

Published in:

Advanced Packaging, IEEE Transactions on  (Volume:32 ,  Issue: 4 )

Date of Publication:

Nov. 2009

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