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Electroabsorption modulation at 1.3 μm on GaAs substrates using a step-graded low temperature grown InAlAs buffer

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3 Author(s)
L. Shen ; Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA ; H. H. Wieder ; W. S. C. Chang

We have achieved quantum confined Stark effects (QCSE) on In/sub 0.38/Ga/sub 0.62/As-In/sub 0.38/Al/sub 0.62/As multiple-quantum-well (MQW) structures, operating at 1.3 μm grown on GaAs substrates. A quantum confined Stark shift of the exciton absorption peak of 47 meV was obtained with an applied electric field of 190 KV/cm, measured on surface normal PIN diodes. The structure is grown by MBE on a novel three-stage, compositionally step graded, In/sub x/Al/sub 1-x/As buffer, doped with Si to 5/spl middot/10/sup 17//cm3, on an n-type GaAs substrate. The total thickness of the buffer is 0.3-0.6 mm, which is considerably smaller than that of linearly graded buffer layers. This structure can be used in both waveguide modulators and surface normal F-P type modulators on GaAs substrates.

Published in:

IEEE Photonics Technology Letters  (Volume:8 ,  Issue: 3 )