By Topic

Indium solder as a thermal interface material using fluxless bonding technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

The capability and diversity of high performance microprocessors is increasing with each process technology generation in order to meet increasing application demand. The cooling designs for these electronic chips have to deal with larger temperature gradients across the die than previously. The key to thermal management is to dissipate the thermal energy from a heat-generating device to a heat sink via conduction through a thermal interface material (TIM). The TIM must also relieve the mechanical stress and absorb strain caused by coefficient of thermal expansion (CTE) mismatch between heat spreader lid and silicon die during field operation. Low modulus TIM is excellent at strain absorption and relieves stress from CTE mismatch of different materials. In this study we explore the fluxless bonding of indium as a candidate TIM for high performance microprocessors due to its high thermal conductivity, low melting temperature and low tensile strength and its dasiagreenpsilaness (non-hazardous material, minimal waste and ease of product reworkability). Challenges in the development process include: controlling bond line thickness, fillet extent and controlling voids in the TIM assembly at reflow temperatures. This paper aims to investigate these key challenges and provide some general recommendations.

Published in:

Semiconductor Thermal Measurement and Management Symposium, 2009. SEMI-THERM 2009. 25th Annual IEEE

Date of Conference:

15-19 March 2009