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Enhancement-mode buried gate InGaP/AlGaAs/lnGaAs heterojunction FETs fabricated by selective wet etching

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3 Author(s)
Okamoto, Y. ; Kansai Electron. Res. Lab., NEC Corp., Shiga, Japan ; Matsunaga, K. ; Kuzuhara, M.

Enhancement-mode buried gate InGaP/AlGaAs/InGaAs heterojunction FETs (HJFETs) were successfully fabricated by using a highly-selective wet recess etching technique. The fabricated HJFET exhibited a maximum drain current of 202 mA/nm, a peak transconductance of 330 mS/mm and a gate-drain breakdown voltage of 33 V. Standard deviation of the threshold voltage was 60 mV, which is less than one fifth that of the conventional AlGaAs/InGaAs HJFET. No appreciable frequency dispersion in the drain current was measured, indicating that the developed InGaP/AlGaAs/InGaAs HJFET with a buried gate structure is promising for large-signal microwave power applications

Published in:

Electronics Letters  (Volume:31 ,  Issue: 25 )