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Browse Journals & Magazines > Electronics Letters ...> Volume:31 Issue:25 Help

High performance near-IR (765 nm) AlAs/ AlGaAs vertical cavity surface emitting lasers

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4 Author(s)
Gulden, K.H. ; Paul Scherrer Inst., Zurich, Switzerland ; Moser, M. ; Luscher, S. ; Schweizer, H.P.

Near infrared (765 nm) AlAs/AlGaAs vertical-cavity surface emitting laser (VCSEL) diodes with minimum threshold currents of 0.6 mA and threshold voltages of 1.9 V are demonstrated. The peak output powers exceed 5 mW. These characteristics represent a significant improvement compared to previously published data for VCSELs operating in this wavelength range

Published in:
Electronics Letters  (Volume:31 ,  Issue: 25 )

Date of Publication: 7 Dec 1995

Page(s):
2176 - 2178
ISSN :
0013-5194
INSPEC Accession Number:
5140623
Digital Object Identifier :
10.1049/el:19951476
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
7 Dec 1995
Sponsored by :
Institution of Engineering and Technology

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