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High performance near-IR (765 nm) AlAs/ AlGaAs vertical cavity surface emitting lasers

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4 Author(s)
Gulden, K.H. ; Paul Scherrer Inst., Zurich, Switzerland ; Moser, M. ; Luscher, S. ; Schweizer, H.P.

Near infrared (765 nm) AlAs/AlGaAs vertical-cavity surface emitting laser (VCSEL) diodes with minimum threshold currents of 0.6 mA and threshold voltages of 1.9 V are demonstrated. The peak output powers exceed 5 mW. These characteristics represent a significant improvement compared to previously published data for VCSELs operating in this wavelength range

Published in:

Electronics Letters  (Volume:31 ,  Issue: 25 )