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A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability

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7 Author(s)
Chenyue Ma ; Shenzhen Grad. Sch., Micro- & Nano Electron. Device & Integrated Technol. Group, Peking Univ., Beijing ; Bo Li ; Lining Zhang ; Jin He
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A unified FinFET reliability model including high K stack dynamic threshold (HKSDT), hot carrier injection (HCI), and negative bias temperature instability (NBTI) has been developed and verified by experimental data. The FinFET-based circuit performances are simulated and compared under these reliability issues by HSPICE simulator after the inclusion of the presented model.

Published in:

Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design

Date of Conference:

16-18 March 2009

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