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Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT

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3 Author(s)
Wanjun Chen ; Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon ; King-Yuen Wong ; Chen, K.J.

We demonstrate a single-chip switch-mode boost converter that features a monolithically integrated lateral field-effect rectifier (L-FER) and a normally off transistor switch. The circuit was fabricated on a standard AlGaN/GaN HEMT epitaxial wafer grown with GaN-on-Si technology. The fabricated rectifier with a drift length of 15 mum exhibits a breakdown voltage of 470 V, a turn-on voltage of 0.58 V, and a specific on-resistance of 2.04 mOmegaldrcm2. The L-FER exhibits no reverse recovery current associated with the turn-off transient because of its unipolar nature. A prototype of GaN-based boost converter that includes monolithically integrated rectifiers and transistors is demonstrated using conventional GaN-on-Si wafers for the first time to prove the feasibility of the GaN-based power IC technology.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 5 )