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GaInNAs-based high-power laser diodes with emission in the 1220-1240 nm wavelength range are presented. Broad-area (BA) devices show very low internal losses of only 0.5 cm-1, allowing high continuous-wave room-temperature output powers of almost 9 W and emission at a wavelength of 1220 nm. Based on the needs for applications like, e.g., pumping of Raman amplifiers, wavelength-stabilized tapered laser diodes are shown with maximum output powers of 1 W together with a high beam quality. Beam propagation factors M 2 down to 1.4, high brightness of up to 23 MW/cm2middotsr, and nearly spatial single-mode emission have been obtained.
Selected Topics in Quantum Electronics, IEEE Journal of (Volume:15 , Issue: 3 )
Date of Publication: May-june 2009