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Computer simulation of a dual gate GaAs field-effect transistor using the Monte Carlo method

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1 Author(s)
Moglestue, C. ; University of Reading, Computer Science Department, Reading, UK

The V/I characteristics of a gallium arsenide dual-gate field-effect transistor have been simulated numerically, using the Monte Carlo method. The transconductances extracted from these characteristics agree with those from a real device of the same geometrical and physical description.

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Solid-State and Electron Devices, IEE Journal on  (Volume:3 ,  Issue: 5 )