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Browse Journals & Magazines > Solid-State and Electron Devi ...> Volume:2 Issue:4 Help

Two-dimensional analysis of breakdown in epitaxial planar junctions

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3 Author(s)
Jindal, S. ; Indian Institute of Technology, Electronics, Electrical Engineering Department, New Delhi, India ; Bhattacharyya, A.B. ; Warrior, J.

A two-dimensional analysis of planar p-n-n+ junctions has been carried out using a successive-point overrelaxation method. This analysis gives better insight into the location of breakdown and the dependence of breakdown voltage on physical parameters of the junction, than obtained by a one-dimensional analysis. During the study an empirical relation has been found between breakdown voltage and the corresponding depletion-layer width. The computer program developed in this work enables calculation of generation current also. The information obtained helps in better device design.

Published in:
Solid-State and Electron Devices, IEE Journal on  (Volume:2 ,  Issue: 4 )

Date of Publication: July 1978

Page(s):
109 - 114
ISSN :
0308-6968
Digital Object Identifier :
10.1049/ij-ssed:19780042
Product Type:
Journals & Magazines
Date of Current Version :
26 August 2009
Issue Date :
July 1978

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