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Two-dimensional analysis of breakdown in epitaxial planar junctions

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3 Author(s)
S. Jindal ; Indian Institute of Technology, Electronics, Electrical Engineering Department, New Delhi, India ; A. B. Bhattacharyya ; J. Warrior

A two-dimensional analysis of planar p-n-n+ junctions has been carried out using a successive-point overrelaxation method. This analysis gives better insight into the location of breakdown and the dependence of breakdown voltage on physical parameters of the junction, than obtained by a one-dimensional analysis. During the study an empirical relation has been found between breakdown voltage and the corresponding depletion-layer width. The computer program developed in this work enables calculation of generation current also. The information obtained helps in better device design.

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Solid-State and Electron Devices, IEE Journal on  (Volume:2 ,  Issue: 4 )