Cart (Loading....) | Create Account
Close category search window
 

Two-dimensional analysis of breakdown in epitaxial planar junctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Jindal, S. ; Indian Institute of Technology, Electronics, Electrical Engineering Department, New Delhi, India ; Bhattacharyya, A.B. ; Warrior, J.

A two-dimensional analysis of planar p-n-n+ junctions has been carried out using a successive-point overrelaxation method. This analysis gives better insight into the location of breakdown and the dependence of breakdown voltage on physical parameters of the junction, than obtained by a one-dimensional analysis. During the study an empirical relation has been found between breakdown voltage and the corresponding depletion-layer width. The computer program developed in this work enables calculation of generation current also. The information obtained helps in better device design.

Published in:

Solid-State and Electron Devices, IEE Journal on  (Volume:2 ,  Issue: 4 )

Date of Publication:

July 1978

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.